Samsung begins mass production of 512 GB flash storage
Samsung has announced the beginning of mass production of what it claims is the world’s first 512 GB embedded Universal Flash Storage (eUFS) solution for next-gen mobile devices.
December 5, 2017
Samsung has announced the beginning of mass production of what it claims is the world’s first 512 GB embedded Universal Flash Storage (eUFS) solution for next-gen mobile devices.
The new solution will provide a huge boost for storage on flagship phones, as well as another product for the strong performing division of Samsung to continue growth. Samsung is already the world’s largest memory chip maker, and should the claims prove to be true, this position will only be consolidated as there are few competitors offering the same capabilities.
“The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards,” said Jaesoo Han, EVP of Memory Sales & Marketing at Samsung Electronics.
“By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world.”
The solution consists of eight 64-layer 512 Gb V-NAND chips and a controller chip, which the team claims doubles the density of Samsung’s previous 48-layer V-NAND-based 256 GB eUFS, using the same amount of space. Although only claims for the moment, Samsung said it will be able to store 130 10 minute 4K Ultra HD video clips, ten times as many as a 64 GB eUFS.
Right now the numbers are just claims, but considering how difficult it is to offer anything new on smartphones these days, such a boost on memory would almost certainly interest the major players.
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